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this is information on a product in full production. december 2013 docid022337 rev 4 1/18 strh12p10 rad-hard 100 v, 12 a p-channel power mosfet datasheet - production data figure 1. internal schematic diagram features ? fast switching ? 100% avalanche tested ? hermetic package ? 100 krad tid ? see radiation hardened applications ? satellite ? high reliability description this p-channel power mosfet is developed with stmicroelectronics unique stripfet? process. it has specifically been designed to sustain high tid and provide immunity to heavy ion effects. this power mosfet is fully escc qualified. note: contact st sales office for information about the specific conditions for product in die form and for other packages. d (1) g (3) s (2) 1 2 3 to-257aa v dss i d r ds(on) q g 100v 12 a 265 m 40 nc table 1. device summary part number escc part number quality level package lead finish mass (g) temp. range eppl STRH12P10GY1 - engineering model to-257aa gold 10 -55 to 150 c - strh12p10gyg 5205/029/01 escc flight target strh12p10gyt 5205/029/02 escc flight solder dip - www.st.com
contents strh12p10 2/18 docid022337 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 8.1 date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 8.2 documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid022337 rev 4 3/18 strh12p10 electrical ratings 18 1 electrical ratings note: for the p-channel mosfet actual polarity of voltages and current has to be reversed table 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds drain-source voltage (v gs = 0) 100 v v gs gate-source voltage 18 v i d (1) 1. rated according to the r thj-case + r thc-s drain current (continuous) at t c = 25c 12 a i d (1) drain current (continuous) at t c = 100c 7.5 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 48 a p tot (1) total dissipation at t c = 25c 75 w dv/dt (3) 3. i sd 12 a, di/dt 36 a/ s, v dd = 80%v (br)dss peak diode recovery voltage slope 2.4 v/ns t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 1.47 c/w r thc-s case-to-sink 0.2 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max ) 6a e as (1) 1. maximum rating value. single pulse avalanche energy (starting t j =25c, i d =i ar , v dd =50 v) @ 110 c 112 mj e ar repetitive avalanche (v ds =50 v, i ar =6 a, f=10 khz, t j = 25c, duty cycle= 50%) 17 mj (v ds =50v, i ar =6a, f=10 khz, tj= 110c, duty cycle= 50%) 5.5 mj
electrical characteristics strh12p10 4/18 docid022337 rev 4 2 electrical characteristics (t case = 25c unless otherwise specified) 2.1 pre-irradiation table 5. pre-irradiation on/off states symbol parameter test conditions min. typ. max unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 16 v 100 na v gs = - 16 v -100 na v gs = 16 v, t c =125 dc 200 na v gs = -16 v, t c =125 dc -200 na bv dss (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-source breakdown voltage i d = 1 ma, v gs = 0 v 100 v v gs(th) gate threshold voltage v ds =v gs , i d = 1 ma 2 4.5 v r ds(on) static drain-source on- resistance v gs = 12 v, i d = 12 a 0.265 0.3 table 6. pre-irradiation dynamic symbol parameter test conditions min. typ. max unit c iss (1) 1. not tested, guaranteed by process. input capacitance v ds = 25 v, f=1mhz, v gs =0 940 1180 1410 pf c oss output capacitance 135 170 205 pf c rss reverse transfer capacitance 55 70 85 pf q g total gate charge v dd = 50 v, i d = 12 a, v gs =12 v 32 40 48 nc q gs gate-source charge 3.5 5 6.5 nc q gd gate-drain charge 7 10 13 nc
docid022337 rev 4 5/18 strh12p10 electrical characteristics 18 table 7. pre-irradiation switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 50 v, i d = 6 a, r g = 4.7 , v gs = 12 v 5 9 13 ns t r rise time 7 19 31 ns t d(off) turn-off-delay time 18 30 42 ns t f fall time 3.5 7 10.5 ns table 8. pre irradiation source drain diode (1) 1. refer to the figure 14 . symbol parameter test conditions min. typ. max unit i sd i sdm (2) 2. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 12 48 a a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs = 0 1.5 v t rr reverse recovery time i sd = 12 a, di/dt = 40 a/ s v dd = 60 v, tj = 25c 178 218 258 ns q rr reverse recovery charge 1700 2130 2560 nc i rrm reverse recovery current 14 19 24 a t rr reverse recovery time i sd = 12a, di/dt = 40 a/ s v dd = 60 v, tj = 150c 225 280 335 ns q rr reverse recovery charge 2650 3250 3950 nc i rrm reverse recovery current 18.5 23.5 28.5 a
radiation characteristics strh12p10 6/18 docid022337 rev 4 3 radiation characteristics the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to radiative environments. every manufacturing lot is tested (using the to-3 package) for total ionizing dose according to the escc 22900 specification, window 1) and single event effect according to the mil-std-750e tm1080 up to a fluency level of 3e+5 ions/cm2 . both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (t amb = 22 3 c unless otherwise specified). total dose radiation (tid) testing one bias conditions using the to-3 package: ?v gs bias: + 15 v applied and v ds = 0 v during irradiation the following parameters are measured (see table 9 , ta ble 10 and table 11 ): ? before irradiation ? after irradiation ? after 24 hrs @ room temperature ? after 168 hrs @ 100 c anneal table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 100 k rad(si)) symbol parameter test conditions drift values unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +1 a i gss gate body leakage current (v ds = 0) v gs = 12 v v gs = -12 v 1.5 -1.5 na bv dss drain-to-source breakdown voltage v gs = 0, i d = 1 ma +5% v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma +150% v r ds(on) static drain-source on resistance v gs = 10 v; i d = 12 a -4% / +35% table 10. dynamic post-irradiation @ t j = 25 c, (co60 rays 100 k rad(si)) (1) 1. parameter not measured after irradiation but guaranteed by the results obtained during the evaluation phase that proves this parameter is directly correlated to the v gs(th) shift. symbol parameter test conditions drift values unit q g total gate charge i g = 1 ma, v gs = 12 v, v ds = 50 v, i ds = 12 a -15% / +5% nc q gs gate-source charge -5% / +200% q gd gate-drain charge -10% / +100%
docid022337 rev 4 7/18 strh12p10 radiation characteristics 18 single event effect, soa the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to heavy ion environment for single event effect (irradiation per mil-std-750e, method 1080 bias circuit in figure 3: single event effect, bias circuit ). seb and segr tests have been performed with a fluence of 3e+5 ions/cm2 . the accept/reject criteria are: ? seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occurs or if the fluence reaches 3e+5 ions/cm2 . ? segr test: the gate current is monitored every 200 ms. a gate stress is performed before and after irradiation. stop condition: as soon as the gate current reaches 100 na (during irradiation or during pigs test) or if the fluence reaches 3e+5 ions/cm2 . the results are: ? no seb ? segr test produces the following soa (see table 12: single event effect (see), safe operating area (soa) and figure 2: single event effect, soa ) table 11. source drain diode post-irradiation @ t j = 25 c, (co60 rays 100 k rad(si)) (1) 1. refer to figure 16 . symbol parameter test conditions drift values .unit v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 5% v table 12. single event effect (see), safe operating area (soa) ion let (mev/(mg/cm 2 ) energy (mev) range (m) v ds (v) @v gs =0 @v gs = 2 v @v gs = 5 v @v gs = 10 v @v gs = 15 v kr 32 768 94 - -60 - - - 756 92 - - - - -20 cu 28 285 43 -100 - -60 - - xe 60 1217 89 - -30 - - -
radiation characteristics strh12p10 8/18 docid022337 rev 4 figure 2. single event effect, soa figure 3. single event effect, bias circuit (a) a. bias condition during radiation refer to table 12: single event effect (see), safe operating area (soa) . 9 '69 '6pd[ 9 *6 9 &x0h9fppj .u0h9fppj ;h0h9fppj
docid022337 rev 4 9/18 strh12p10 electrical characteristics (curves) 18 4 electrical characteristics (curves) figure 4. safe operating area figure 5. thermal impedance figure 6. output characteristics figure 7. transfer characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations i d 10.00 1.00 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms 0.10 tj=150c tc=25c single pulse am16049v1
electrical characteristics (curves) strh12p10 10/18 docid022337 rev 4 figure 10. normalized bv dss vs temperature figure 11. static drain-source on resistance figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature figure 14. source drain-diode forward characteristics
docid022337 rev 4 11/18 strh12p10 test circuit 18 5 test circuit figure 15. switching times test circuit for resistive load (1) 1. max driver v gs slope = 1v/ns (no dut) figure 16. source drain diode figure 17. unclamped inductive load test circuit (single pul se and repetitive)
package mechanical data strh12p10 12/18 docid022337 rev 4 6 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid022337 rev 4 13/18 strh12p10 package mechanical data 18 figure 18. to-257aa drawing 0117268_e
package mechanical data strh12p10 14/18 docid022337 rev 4 table 13. to-257aa mechanical data dim. mm. inch. min. typ. max. min. typ. max. a 4.83 5.08 0.190 0.200 a1 0.89 1.14 0.035 0.045 a2 3.05 0.120 b 0.64 1.02 0.025 0.040 b1 0.64 0.76 0.89 0.025 0.030 0.035 d 16.38 16.89 0.645 0.665 d1 10.41 10.92 0.410 0.430 d2 0.97 0.038 e 2.54 0.100 e 10.41 10.67 0.410 0.420 l 12.70 19.05 0.500 0.750 l1 13.39 13.64 0.527 0.537 p 3.56 3.81 0.140 0.150
docid022337 rev 4 15/18 strh12p10 order codes 18 7 order codes for specific marking only the complete structure is: ? st logo ? esa logo ? date code (date of sealing of the package): yywwa ?yy: year ? ww: week number ? a: week index ? escc part number (as mentioned in the table) ? warning signs (e.g. beo) ? country of origin: fr (france) part serial number within in the assembly lot contact st sales office for information about the specific conditions for products in die form and for other packages. table 14. ordering information order code escc part number quality level eppl package lead finish marking packing STRH12P10GY1 - engineering model - to-257aa gold STRH12P10GY1 + beo strip pack strh12p10gyg 5205/029/01 escc flight target 520502901r + beo strh12p10gyt 5205/029/02 - solder dip 520502902r + beo
shipping details strh12p10 16/18 docid022337 rev 4 8 shipping details 8.1 date code the date code for ?escc flight? is structured as follows: yywwz where: ? yy: last two digits of year ? ww: week digits ? z: lot index in the week 8.2 documentation the table below provide a summary of the documentation provided with each type of products. table 15. documentation provide for each type of product quality level radiation level documentation engineering model - - escc flight 100 krad certificate of conformance, radiation verification test report
docid022337 rev 4 17/18 strh12p10 revision history 18 9 revision history table 16. document revision history date revision changes 07-oct-2011 1 first release. 24-jun-2013 2 document status promoted form preliminary data to production data. ? modified: figure 1 ? modified: e as , e ar parameter and values in table 4 ? modified: i gss , and added note 1 in table 5 ? added: note 1 in table 6 ? modified: t rr , q rr and i rrm parameter in table 8 ? modified: r ds(on) test conditions in table 9 , the entire test conditions in table 10 ? modified: figure 4 25-nov-2013 3 ? modified: package drawing and figure 1 . 18-dec-2013 4 ? updated table 1: device summary and table 14: ordering information . ? updated section : total dose radiation (tid) testing .
strh12p10 18/18 docid022337 rev 4 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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